Eximer Laser Annealed Poly-Crystalline TFT

1118 Eximer laser treatment for compound myopia and astigmatism

Low Temperature Polysilicon Thin-Film Transistors on Flexible Substrates

We fabricated low-temperature polycrystalline silicon thin-film transistors (poly-Si TFTs) on flexible substrates using sputtered amorphous Si (a-Si) precursor films. The a-Si precursor films were deposited by using rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were laser annealed by using XeCl excimer laser and...

Side-pumped crystalline Raman laser.

A crystalline Raman laser is pumped at 90° to the Raman laser axis by a single pass from a line-focused 532 nm pump laser of pulse duration 10 ns. The Raman laser threshold was 6.1 mJ, and at 12 mJ pump energy, a maximum output energy of 2.7 mJ was obtained with a slope efficiency of 46%. The threshold pump intensity is within a factor of 2 of the same device when end-pumped. The results highli...

Dynamics of the solidification of laser-annealed Si thin films

Nanosccond time-resolved reflectivity and transmis~ion measurements are uscd for the observation of solidification phenomena, following incornpletc or complete rneltrng of thin Si films ( d = 125 nm) by nanosecond laser pulses. Solidification is observed to proceed at the liquid-solid interface as Tong as the film is not melted completely. OR complete melting of the film, nucleation in the liqu...

Electron spin and cyclotron resonance of laser annealed silicon

EPR and cyclotron resonance investigations have been performed on laser annealed Si wafers, leading to the identification of the [V + Oi]complex in virgin Si and to a donor signal quenching in P-implanted Si. Revue Phys. Appl. 15 (1980) 21-23 JANVIER 1980, PAGE 1 Classification Physics Abstracts 73.20Hb 76.30 79.20Ds Introduction. Laser annealing techniques have been investigated recently for i...